2008-08-14 1 bfr460l3 2 3 1 npn silicon rf transistor* ? for low voltage / low current applications ? ideal for vco modules and low noise amplifiers ? low noise figure: 1.1 db at 1.8 ghz ? smd leadless package ? excellent esd performance typical value 1500v (hbm) ? high f t of 22 ghz ? pb-free (rohs compliant) package 1) ? qualified according aec q101 * short term description esd ( e lectro s tatic d ischarge) sensitive device, observe handling precaution! type marking pin configuration package bfr460l3 ab 1 = b 2 = e 3 = c tslp-3-1 maximum ratings parameter symbol value unit collector-emitter voltage t a > 0 c t a 0 c v ceo 4.5 4.2 v collector-emitter voltage v ces 15 collector-base voltage v cbo 15 emitter-base voltage v ebo 1.5 collector current i c 50 ma base current i b 5 total power dissipation 2) t s 108c p tot 200 mw junction temperature t j 150 c operation junction temperature range t j o - ... - - ambient temperature t a -65 ... 150 c storage temperature t st g -65 ... 150 1 pb-containing package may be available upon special request 2 t s is measured on the collector lead at the soldering point to the pcb
2008-08-14 2 bfr460l3 thermal resistance parameter symbol value unit junction - soldering point 1) r thjs 210 k/w electrical characteristics at t a = 25c, unless otherwise specified parameter symbol values unit min. typ. max. dc characteristics collector-emitter breakdown voltage i c = 1 ma, i b = 0 v (br)ceo 4.5 5.8 - v collector-emitter cutoff current v ce = 15 v, v be = 0 i ces - - 10 a collector-base cutoff current v cb = 5 v, i e = 0 i cbo - - 100 na emitter-base cutoff current v eb = 0,5 v, i c = 0 i ebo - - 1 a dc current gain i c = 20 ma, v ce = 3 v, pulse measured h fe 90 120 160 - 1 for calculation of r thja please refer to application note thermal resistance
2008-08-14 3 bfr460l3 electrical characteristics at t a = 25c, unless otherwise specified parameter symbol values unit min. typ. max. ac characteristics (verified by random sampling) transition frequency i c = 30 ma, v ce = 3 v, f = 1 ghz f t 16 22 - ghz collector-base capacitance v cb = 3 v, f = 1 mhz, v be = 0 , emitter grounded c cb - 0.28 0.45 pf collector emitter capacitance v ce = 3 v, f = 1 mhz, v be = 0 , base grounded c ce - 0.14 - emitter-base capacitance v eb = 0.5 v, f = 1 mhz, v cb = 0 , collector grounded c eb - 0.55 - noise figure i c = 5 ma, v ce = 3 v, z s = z sopt , f = 1.8 ghz f = 3 ghz f - - 1.1 1.35 - - db power gain, maximum stable 1) i c = 20 ma, v ce = 3 v, z s = z sopt , z l = z lopt , f = 1.8 ghz g ms - 16.0 - db power gain, maximum available 1) i c = 20 ma, v ce = 3 v, z s = z sopt , z l = z lopt , f = 3 ghz g ma - 11 - db transducer gain i c = 20 ma, v ce = 3 v, z s = z l = 50 ? , f = 1,8 ghz f = 3 ghz | s 21e | 2 - - 14 10 - - db third order intercept point at output 2) v ce = 3 v, i c = 20 ma, f = 1.8 ghz ip 3 - 27 - dbm 1db compression point at output i c = 20 ma, v ce = 3 v, f = 1.8 ghz p -1db - 11.5 - 1 g ma = | s 21 / s 12 | (k-(k2-1) 1/2 ), g ms = ? s 21 / s 12 ? 2 ip3 value depends on termination of all intermodulation frequency components. termination used for this measurement is 50 ? from 0.1 mhz to 6 ghz
2008-08-14 4 bfr460l3 collector-base capacitance c cb = ? ( v cb ) f = 1mhz 0 2 4 6 8 10 v 14 vcb 0 0.1 0.2 0.3 0.4 0.5 0.6 pf 0.8 ccb transition frequency f t = ? ( i c ) f = 1 ghz v ce = parameter in v 0 5 10 15 20 25 30 35 ma 45 ic 2 4 6 8 10 12 14 16 18 20 22 ghz 26 ft 2 to 4v 1v power gain g ma , g ms , | s 21 | 2 = ? ( f ) v ce = 3 v, i c = 20 ma 0 1 2 3 4 ghz 6 f 0 5 10 15 20 25 30 35 40 db 50 g gms gma |s21|2 power gain g ma , g ms = ? ( i c ) v ce = 3v f = parameter in ghz 0 5 10 15 20 25 30 ma 40 ic 4 6 8 10 12 14 16 18 20 db 24 g 0.9 1.8 2.4 3 4 5 6
2008-08-14 5 bfr460l3 power gain g ma , g ms = ? ( v ce ) i c = 20 ma f = parameter in ghz 0.5 1 1.5 2 2.5 3 3.5 v 4.5 vce 0 2 4 6 8 10 12 14 16 18 20 db 24 g 0.9 1.8 2.4 3 4 5 6
2008-08-14 6 bfr460l3 package tslp-3-1 2 3 1 0.4 +0.1 bfr193l3 type code pin 1 marking laser marking 0.76 4 1.16 0.5 pin 1 marking 8 reel ?180 mm = 15.000 pieces/reel for board assembly information please refer to infineon website "packages" package outline foot print marking layout (example) standard packing stencil apertures copper solder mask 0.275 0.2 0.315 0.945 0.45 0.17 0.355 0.2 0.35 0.225 1 0.6 0.225 0.15 0.35 0.3 r0.1 1 2 0.05 0.35 0.035 2 x 0.15 1) top view bottom view 1) dimension applies to plated terminal 0.035 0.5 1) 0.05 0.6 3 0.05 0.65 0.035 2x 0.25 1) 0.035 0.25 1) 1 0.05 pin 1 marking 0.05 max.
2008-08-14 7 bfr460l3 edition 2006-02-01 published by infineon technologies ag 81726 mnchen, germany ? infineon technologies ag 2007. all rights reserved. attention please! the information given in this dokument shall in no event be regarded as a guarantee of conditions or characteristics (?beschaffenheitsgarantie?). with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, infineon technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. information for further information on technology, delivery terms and conditions and prices please contact your nearest infineon technologies office ( www.infineon.com ). warnings due to technical requirements components may contain dangerous substances. for information on the types in question please contact your nearest infineon technologies office. infineon technologies components may only be used in life-support devices or systems with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
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